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BSC025N03LS G
OptiMOSTM3 Power-MOSFET
Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC1) for target applications * N-channel; Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * Avalanche rated * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type BSC025N03LS G Package PG-TDSON-8 Marking 025N03LS
Product Summary V DS R DS(on),max ID 30 2.5 100 PG-TDSON-8 V m A
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C V GS=10 V, T A=25 C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage
1)
Value 100 93 100 77
Unit A
25 400 50 135 6 20 mJ kV/s V
I D,pulse I AS E AS dv /dt V GS
T C=25 C T C=25 C I D=50 A, R GS=25 I D=50 A, V DS=24 V, di /dt =200 A/s, T j,max=150 C
J-STD20 and JESD22
Rev. 1.6
page 1
2009-10-22
BSC025N03LS G
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 83 2.5 -55 ... 150 55/150/56 C Unit W
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) 1.5 18 50 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A Gate resistance Transconductance
2)
30 1 -
0.1
2.2 1
V
A
0.8
10 10 2.9 2.1 1.6 110
100 100 3.6 2.5 2.8 S nA m
RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A
55
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information
3)
Rev. 1.6
page 2
2009-10-22
BSC025N03LS G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 12.4 6.9 6.0 11.5 27 2.9 56 17 9.2 9.9 17 36 74 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 4600 1500 88 10 6.2 36 6.0 6100 2000 ns pF Values typ. max. Unit
Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage
Q g(sync) Q oss
-
23 40
31 53
nC
IS I S,pulse V SD
T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s
-
0.8
76 400 1.1
A
V
Reverse recovery charge
4) 5)
Q rr
-
-
20
nC
See figure 13 for more detailed information See figure 16 for gate charge parameter definition
Rev. 1.6
page 3
2009-10-22
BSC025N03LS G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V
100
120
80
100
80 60
P tot [W]
I D [A]
40 20 0 0 40 80 120 160
60
40
20
0 0 40 80 120 160
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
limited by on-state resistance 10 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
1 s
102
DC
100 s
1
0.5
101
1 ms
Z thJC [K/W]
I D [A]
0.2 0.1
10 ms
0.1 10
0
0.05 0.02 0.01 single pulse
10-1 10-1 100 101 102
0.01
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.6
page 4
2009-10-22
BSC025N03LS G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
300
5V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
8
250
10 V
3.2 V 4V
6
200
150
3.5 V
R DS(on) [m]
3.5 V
I D [A]
4
4V 4.5 V 5V 10 V
100
3.2 V
2
11.5 V
50
3V 2.8 V
0 0 1 2 3
0 0 10 20 30 40 50
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
200
8 Typ. forward transconductance g fs=f(I D); T j=25 C
250
160
200
120
150
80
g fs [S]
100 40
150 C 25 C
I D [A]
50
0 0 1 2 3 4 5
0 0 40 80 120 160
V GS [V]
I D [A]
Rev. 1.6
page 5
2009-10-22
BSC025N03LS G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A
4
2.5
2 3
98 %
R DS(on) [m]
typ
2
V GS(th) [V]
100 140 180
1.5
1
1 0.5
0 -60 -20 20 60
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
10000
1000
Ciss 25 C Coss 150 C, 98%
103
1000
100
150 C 25 C, 98%
C [pF]
102
100
Crss
I F [A]
10 101
10
1 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0
0
V DS [V]
V SD [V]
Rev. 1.6
page 6
2009-10-22
BSC025N03LS G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD
12
6V 15 V
10
25 C 100 C
24 V
8
125 C
10
V GS [V]
1 10 100 1000
I AV [A]
6
4
2
1
0 0 10 20 30 40 50 60 70
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
34
V GS
32
Qg
30
V BR(DSS) [V]
28
26
V g s(th)
24
22
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
20
T j [C]
Rev. 1.6
page 7
2009-10-22
BSC025N03LS G
Package Outline PG-TDSON-8: Outline PG-TDSON-8
Rev. 1.6
page 8
2009-10-22
BSC025N03LS G
Package Outline PG-TDSON-8: Tape
Dimensions in mm Rev. 1.6 page 9 2009-10-22
BSC025N03LS G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.6
page 10
2009-10-22

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